Aliovalent Dopant Distribution in Nanocrystalline Tin Dioxide Thin Films Studied by XRay Energy Dispersive Spectroscopy

Oxygen incorporation in Ti2AlC thin films studied by electron energy loss spectroscopy and ab initio calculations

Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy.

Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparti...

Investigation of resistive switching in anodized titanium dioxide thin films

In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

Titanium dioxide nanocrystalline bactericidal thin films grown by sol-gel technique

Titanium dioxide thin films were grown by sol–gel technique in order to obtain films to be used in photocatalytic reactions. We present results on the structural and optical characterization measured for series of films in which number of layers and sintering temperature were changed. Using X-ray diffraction we have characterized the crystalline phase in the films depending on the growth condit...

Interfacial coherency stress distribution in TiN/AlN bilayer and multilayer films studied by FEM analysis

The development of interfacial coherency stresses in TiN/AlN bilayer and multilayer films was investigated by finite element method (ABAQUS) using the four-node bilinear quadrilateral axisymmetric element CAX4R. The TiN and AlN layers are always in compression and tension at the interface, respectively, as may be expected from the fact TiN has larger lattice parameter than AlN. Both, the bi-lay...